Process for fabricating an array of germanium-based diodes with low dark current

ABSTRACT

A process for fabricating an optoelectronic device including an array of germanium-based photodiodes including the following steps: producing a stack of semiconductor layers, made from germanium; producing trenches; depositing a passivation intrinsic semiconductor layer, made from silicon; annealing, ensuring, for each photodiode, an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of a semiconductor portion, thus forming a peripheral zone of the semiconductor portion, made from silicon-germanium.

TECHNICAL FIELD

The field of the invention is that of photodiodes made from germanium.The invention finds an application notably in the field of detectinglight radiation belonging to the short wavelength infrared range.

PRIOR ART

Germanium-based photodiodes are suitable for detecting light radiationin the short wavelength infrared (SWIR). The use thereof is advantageousnotably when it is a question of detecting the presence of chemicalelements, the spectral signature of which is located in the SWIR range.These may thus be water, lipids, chemical elements present in biologicaltissues, etc. They are also used in the telecommunications field, andalso in the datacom field.

Germanium-based photodiodes customarily have a mesa structure, in whichthe diodes are produced from a stack of semiconductor layers including ap-doped lower layer resting on a growth substrate, an intrinsicintermediate layer, and an n-doped upper layer. The pixelation betweenthe photodiodes is obtained by localized etching, so that the lateraledge of each photodiode can then be defined by each of the semiconductorlayers. The upper face of the n-doped layer and the lateral edge arethen coated with a passivation layer made of dielectric material, forexample a silicon oxide. Since the structure is of mesa type, thedielectric passivation layer extends in a three-dimensional manner so asto cover the photodiode, and not in an essentially planar manner.

There is a constant need to have a small-pitch photodiode array, havinga fill factor greater than in the case of mesa photodiodes, the fillfactor being defined as the ratio of the detection surface area to thetotal surface area of the photodiode. It is then important to ensure agood passivation of the upper face and of the lateral edge of thephotodiodes, to the extent that the surface component of the darkcurrent can then become predominant.

However, it appears that the presence of the dielectric passivationlayer may despite everything contribute to generating a sizeable darkcurrent. In this regard, the article by Sood et al. entitled‘Characterization of SiGe-Detector Arrays for Visible-NIR Imaging SensorApplications’, Proc. of SPIE, vol. 8012, 801240, 2011, describes aprocess for fabricating a photodiode that makes it possible to limit thedark current. The dark current is linked to the presence of a depletedzone located in the semiconductor material of the photodiode, at theinterface with the dielectric passivation layer. The fabrication processthen comprises a step of annealing the photodiode under N₂H₂, making itpossible to transform this depleted zone into a hole accumulation zone.It appears that this step makes it possible to reduce the intensity ofthe dark current.

However, this annealing step, intended to change the depleted zone intoan accumulation zone, may lead to a degradation of the photodiodeperformance, notably owing to an undesired modification of thedimensions of the n-doped layer, to the extent that the diffusioncoefficient of the n-type dopant elements in the germanium (e.g.phosphorus) may be sizeable. Furthermore, the presence and thecharacteristics of the depleted zone may be linked to the technique usedto deposit the dielectric passivation layer and also to the operatingconditions. As a result, the annealing in question may then not make itpossible to reproducibly obtain the desired accumulation zone andtherefore the desired reduction of the dark current.

SUMMARY OF THE INVENTION

The objective of the invention is to at least partly overcome thedrawbacks of the prior art, and more particularly to propose a processfor fabricating an array of germanium-based planar photodiodes, thushaving a high fill factor, and making it possible to obtain a low darkcurrent while maintaining the properties of the photodiode(s) and inparticular the dimensions of the n-doped region(s).

For this, one subject of the invention is a process for fabricating anoptoelectronic device comprising an array of planar photodiodes madefrom germanium, comprising the following steps:

-   -   i) producing a stack of semiconductor layers, made from        germanium, having a first face and a second face that are        opposite one another and are parallel to a main plane of the        photodiodes, and comprising:        -   a p-doped first layer, defining the first face,        -   a second layer, covering the first layer, and defining the            second face,    -   ii) producing trenches, extending through said stack from the        second face in the direction of the first face, defining for        each photodiode a semiconductor portion of said stack;    -   iii) depositing a passivation intrinsic semiconductor layer,        made from silicon, covering the second face and filling the        trenches;    -   iv) annealing, ensuring, for each photodiode, an interdiffusion        of the silicon of the passivation semiconductor layer and of the        germanium of the semiconductor portion, thus forming what is        referred to as a peripheral zone of the semiconductor portion,        made from silicon-germanium, and located in contact with the        passivation semiconductor layer.

Certain preferred but nonlimiting aspects of this fabrication processare the following.

The process may comprise, following the interdiffusion annealing step, astep of producing, for each photodiode, what is referred to as ann-doped upper region of the semiconductor portion, flush with the secondface and located at a distance from a lateral edge of the semiconductorportion connecting the first and second faces to one another, via thefollowing substeps:

-   -   localized ion implantation of n-type dopant elements in what is        referred to as a central portion of the passivation        semiconductor layer,    -   annealing, ensuring a diffusion of the n-type dopant elements        from the central portion to the semiconductor portion, thus        forming the n-doped upper region.

The process may comprise a step of doping so-called lateral parts of thepassivation semiconductor layer, that are located in the trenches, bylocalized ion implantation of p-type dopant elements, thus forming, foreach photodiode, a p-doped lateral part, followed by a step of annealingensuring the diffusion of the p-type dopant elements from the lateralparts to the semiconductor portions, thus forming, in each semiconductorportion, what is referred to as a p-doped lateral region flush with alateral edge of the semiconductor portion.

The step of diffusion annealing of the p-type dopant elements is carriedout before or during the step of diffusion annealing of the n-typedopant elements.

The process may comprise a step of producing an electricalinterconnection layer, comprising:

-   -   depositing an upper insulating layer made of a dielectric        material, covering the passivation semiconductor layer, then    -   forming, through the upper insulating layer, conductive        portions, that come into contact, for each photodiode, with what        is referred to as a p-doped lateral part of the passivation        semiconductor layer located in a trench on the one hand, and        with what is referred to as an n-doped central portion of the        passivation semiconductor layer located on the second face and        in contact with what is referred to as an n-doped upper region        of the semiconductor portion.

The invention also relates to an optoelectronic device comprising anarray of planar photodiodes made from germanium, having a first face anda second face that are opposite one another and are parallel to a mainplane of the photodiodes, each photodiode comprising:

-   -   a semiconductor portion, comprising:        -   what is referred to as a p-doped lower first region flush            with the first face,        -   what is referred to as an n-doped upper second region flush            with the second face,        -   an intermediate region located between the first and second            regions and surrounding the second region in the main plane,    -   a trench, extending from the second face in the direction of the        first face, and defining a lateral edge of the semiconductor        portion connecting the first and second faces;    -   a passivation semiconductor layer, made from silicon, covering        the second face and filling the trench;    -   what is referred to as a peripheral zone made from        silicon-germanium, located in the semiconductor portion in        contact with the passivation semiconductor layer at the second        face and at the lateral edge.

The passivation semiconductor layer may comprise what is referred to asan upper part extending in contact with the second face, and what isreferred to as a lateral part filling the trenches and extending incontact with the lateral edge, the upper part comprising what isreferred to as an n-doped central portion located in contact with then-doped second region, and what is referred to as a peripheral portion,surrounding the central portion in the main plane.

The lateral part may be p-doped, and be in contact with the p-dopedfirst region.

Each semiconductor portion may comprise what is referred to as a p-dopedlateral region located in contact with the p-doped lateral part.

The optoelectronic device may comprise a control chip suitable forbiasing the photodiodes, assembled and electrically connected to thearray of photodiodes at the second face.

BRIEF DESCRIPTION OF THE DRAWINGS

Other aspects, objectives, advantages and features of the invention willbecome more clearly apparent upon reading the following detaileddescription of preferred embodiments thereof, which description isprovided by way of nonlimiting example and with reference to theappended drawings, in which:

FIG. 1 is a schematic and partial view, in cross section, of aphotodiode of an array of planar photodiodes according to oneembodiment;

FIGS. 2A to 2L illustrate, schematically and partially, various steps ofa process for fabricating an array of photodiodes according to theembodiment illustrated in FIG. 1.

DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS

In the figures and in the remainder of the description, the samereferences represent identical or similar elements. Moreover, thevarious elements are not represented to scale so as to enhance theclarity of the figures. Furthermore, the various embodiments andvariants are not mutually exclusive and may be combined with oneanother. Unless otherwise indicated, the terms “substantially”,“approximately” and “of” the order of mean to within 10%, and preferablyto within 5%.

The invention relates generally to a process for fabricating anoptoelectronic device comprising an array of photodiodes made fromgermanium. Each photodiode is thus suitable for detecting lightradiation in the short wavelength infrared (SWIR) corresponding to thespectral range extending from 0.8 nm to 1.7 μm approximately, or even to2.5 μm approximately.

The photodiodes are said to be planar in so far as they extend along thesame main plane, between first and second parallel faces that areopposite one another. They each comprise what is referred to as asemiconductor detection portion, within which a PN or PIN junction ispresent, having a substantially constant thickness between the first andsecond faces. Each photodiode comprises what is referred to as a p-dopedlower first region flush with the first face continuously, what isreferred to as an n-doped upper second region locally flush with thesecond face and forming a doped well, and an intermediate region locatedbetween the two doped regions and surrounding the doped second region inthe main plane. This intermediate region may be p-doped, so as to form aPN junction, or be intrinsic, i.e. not intentionally doped, so as toform a PIN junction. The planar photodiodes do not then have a mesastructure, and are optically isolated from one another by trenchesfilled here with a part of a passivation semiconductor layer made fromsilicon. They thus have a particularly high fill factor. Furthermore,the photodiodes are said to be passivated in so far as the second faceand also the lateral edge defined by the trenches are coated with thepassivation semiconductor layer made from silicon. As described indetail below, the passivation semiconductor layer is notably intended toreduce the surface component of the dark current of each photodiode. Itis advantageously used to apply an electric potential to the p+ dopedfirst region from the second face.

Generally, the dark current of a photodiode is the electric currentpresent within the photodiode during operation, when it is not subjectedto light radiation. It may be formed of currents generated thermallywithin the volume of the semiconductor detection portion (diffusioncurrents, depletion currents, tunnel currents, etc.) and of surfacecurrents.

The surface currents may be linked to the presence of electric chargesin the passivation layer when it is made from a dielectric material, forexample from a silicon oxide. Specifically, these electric charges mayinduce a modification of the bending of the energy bands close to thesurface, leading to the formation of a depleted zone or of an inversionzone. The depleted zone, when it is located in the space charge zone ofthe photodiode, may give rise to unwanted generation-recombinationcurrents. Moreover, the inversion zone, which is then electricallyconductive, may allow electric charges to move between n-doped andp-doped biased regions situated at the interface with the passivationdielectric layer.

The surface currents may also be linked to the presence of defects inthe semiconductor material of the photodiode, these defects notablybeing located close to surfaces of the semiconductor detection portion,in particular at the lateral edge and the second face. These defects mayoriginate from the localized etching carried out in order to form thetrenches, and also from the undesired incorporation of contaminantsduring technological steps of the fabrication process. These defects maybe behind the creation of minority carriers in the absence of lightradiation. These non-photogenerated minority carriers may then diffuseto the space charge zone of the photodiode and create an electriccurrent, here a dark current.

The fabrication process according to one embodiment thus makes itpossible to obtain an array of planar photodiodes made from germanium,that are passivated by a passivation semiconductor layer made fromsilicon and covering the second face and also the lateral edge in thetrenches. At the interface with the passivation semiconductor layer, thesemiconductor detection portion of each photodiode comprises what isreferred to as a peripheral zone made from silicon-germanium. Asdescribed in detail below, such a peripheral zone has a higherconcentration of silicon than that which the semiconductor detectionportion may optionally have, so that it has a bandgap energy (gap)higher than that of the semiconductor detection portion. This peripheral“gap opening” is then located where the potential contaminants andsurface defects are present, which makes it possible to limit theunwanted surface currents of the dark current.

Thus, the fabrication process makes it possible to obtain an array ofplanar photodiodes made from germanium with a high fill factor and areduced dark current. As is described in detail below, the peripheralzone with gap opening is obtained without causing a substantialmodification of the characteristics of the semiconductor detectionportion, and more precisely without inducing a modification of thedimensions of the p-doped first region and advantageously of the n-dopedsecond region.

For the sake of clarity, a photodiode of an array of germanium-based,planar and passivated photodiodes, obtained by the fabrication processaccording to one embodiment will firstly be illustrated.

FIG. 1 is a partial and schematic cross-sectional view of such apassivated planar photodiode 2 belonging to an array of photodiodes 2made from germanium. Here they are biased, for example reverse-biased,from the second face 10 b and are passivated and optically isolated fromone another by a passivation semiconductor layer 30 extending over thesecond face 10 b and filling the pixelation trenches 13.

A three-dimensional direct reference system (X,Y,Z) is defined herewhere the axes X and Y form a plane parallel to the main plane of thephotodiodes 2, and where the axis Z is oriented along the thickness ofthe semiconductor detection portion 20 of the photodiode, from the firstface 10 a in the direction of the second face 10 b. Furthermore, theterms “lower” and “upper” refer to an increasing position along the +Zdirection.

Each photodiode 2 comprises a semiconductor detection portion 20extending along the Z axis between a first and a second face 10 a, 10 bthat are parallel to and opposite one another, and is delimited in theXY plane by a lateral edge 20C which connects the two faces together.The first and second faces 10 a, 10 b are common to each photodiode 2 ofthe array. They may be substantially planar, so that the semiconductordetection portion 20 has a substantially constant thickness along the Zaxis, for example of between a few hundred nanometres and a few microns,for example of between 1 μM and 10 μm approximately. The thickness ischosen so as to obtain a good absorption in the wavelength range of thelight radiation to be detected. The semiconductor detection portion 20has a transverse dimension in the XY plane that may be between a fewhundred nanometres and a few tens of microns, for example between 1 μmand 100 μm, preferably between 1 μm and 20 μm approximately.

The semiconductor detection portion 20 is made of a crystallinesemiconductor material based on germanium, which is preferablymonocrystalline. The expression “based on a chemical element ofinterest” is understood to mean that the crystalline semiconductormaterial corresponds to the chemical element of interest or is an alloyformed of at least the chemical element of interest. The photodiodes 2may therefore be made of germanium Ge, silicon-germanium SiGe,germanium-tin GeSn, or silicon-germanium-tin SiGeSn. In this example,the semiconductor detection portion 20 is derived from at least onelayer made of germanium. It may thus be a layer or a substrate made ofthe same germanium-based semiconductor material and have regions ofdifferent conductivity types (homojonction) so as to form a PN or PINjunction. As a variant, it may be a stack of sublayers of variousgermanium-based semiconductor materials (heterojunction), which are thenformed from germanium. The semiconductor material of the semiconductordetection portion 20 has, outside of a peripheral zone 24 describedbelow, a first concentration of silicon that may be zero or nonzero.

The semiconductor detection portion 20 is thus formed of a p-doped firstregion 21, which is flush with the first face 10 a and extends in the XYplane from the lateral edge 20C, of an n-doped second region 22, whichis locally flush with the second face 10 b and forms an n-doped welllocated at a distance from the lateral edge 20C, and of an intermediateregion 23 which is intrinsic (in the case of a PIN junction), or p-doped(in the case of a PN junction) located between and in contact with thetwo doped regions 21, 22 and surrounds the n-doped second region 22 inthe main plane. The term “flush with” is understood to mean “reach thelevel of”, or “extends from”. In this example, the semiconductorjunction is of PIN type, the first region 21 being p+-doped, the secondregion 22 being n+-doped and the intermediate region 23 is intrinsic(not intentionally doped).

The first region 21, here p+-doped, extends in the XY plane flush withthe first face 10 a, here from the lateral edge 20C. It extends alongthe Z axis from the first face 10 a. It may have a substantiallyhomogeneous thickness along the Z axis and thus be flush only with alower zone of the lateral edge 20C. As a variant, as illustrated in FIG.1, the p+-doped first region 21 may advantageously have a p+-dopedlateral region 25 that is continuously flush with the lateral edge 20 calong the Z axis and extends over the entire periphery of thesemiconductor detection portion 20. The p+-doped first region 21 mayhave a doping that may be between 10¹⁸ and 10²⁰ at/cm³ approximately.

The n+-doped second region 22 extends here from the second face 10 b andis surrounded by the intermediate region 23 in the main plane. It is ata distance from the lateral edge 20C of the semiconductor detectionportion 20 in the XY plane. It thus forms an n-doped well that is flushwith the second face 10 b and is spaced a nonzero distance away withrespect to the lateral edge 20C and also to the first face 10 a. Then-doped second region 22 thus contributes to delimiting the second face10 b. It may have a doping that may be between 10¹⁹ and 10²¹ at/cm³approximately.

The intermediate region 23 is located between the two n+-doped andp+-doped regions. It therefore surrounds the n+-doped second region 22in the XY plane and is locally flush with the second face 10 b. It isintrinsic so as to form a PIN junction but may be p-doped in order toform a PN junction.

The optoelectronic device 1 may comprise a lower insulating layer 51,made of a dielectric material, covering the first face 10 a of thesemiconductor detection portion 20, and also, as described below, thelower face of trenches 13 filled with a silicon-based passivationsemiconductor material. The trench 13 may then contribute toelectrically biasing the photodiode, here from the second face, and topixelating the array of photodiodes 2 (optical isolation). The lowerinsulating layer 51 may further be suitable for forming anantireflection function with respect to the incident light radiation.Specifically, it forms the face for receiving the light radiationintended to be detected.

The semiconductor detection portion 20 of each photodiode 2 is delimitedlaterally, in the XY plane, by a preferably continuous trench 13, whichextends here over the entire thickness of the semiconductor detectionportion 20 to open onto the lower insulating layer 51. As a variant, thetrench 13 may not open onto the lower insulating layer 51 and may end inthe p+-doped first region 21. The trenches 13 may have transversedimensions, in the XY plane, of the order of 0.5 μm to 2.0 μm.

A passivation semiconductor layer 30 continuously covers the second face10 b and entirely fills the trenches 13. It is thus in contact with thep+-doped first region 21 at the lateral edge 20C, with the intermediateregion 23 at the lateral edge 20C and the second face 10 b, and with then+-doped second region 22 at the second face 10 b. It is made of asilicon-based semiconductor material. It is thus formed of an upper part32 in contact with the second face 10 b and of a lateral part 31 fillingthe trench 13. The upper 32 and lateral 31 parts form two continuousjoined zones of the same passivation semiconductor layer 30. This layeris made from silicon, and may be, for example, amorphous silicon,polycrystalline silicon, silicon-germanium. The passivationsemiconductor layer 30 has a higher concentration of silicon than thatof the germanium-based semiconductor material of the semiconductordetection portion 20. The upper part 32 may have a thickness, along theZ axis, for example of between 100 nm and 1 μm.

As mentioned above, the defects of the germanium-based semiconductormaterial may be present close to the lateral edge 20C and the secondface 10 b of the semiconductor detection portion 20. These defects mayoriginate, as regards the lateral edge 20C, from the localized etchingcarried out in order to obtain the trenches 13. As regards the secondface 10 b, they may originate from contaminant elements unintentionallyincorporated during technological steps carried out during thefabrication process. These defects and these contaminants may introducean intermediate energy level into the bandgap energy of thegermanium-based semiconductor material, which may then enable thespontaneous passage of a charge carrier from one energy band to another,thus creating an electron-hole pair and therefore a minority carrier.This minority carrier, when it diffuses to the space charge zone, maythen contribute to the dark current.

Furthermore, a passivation layer made of a dielectric material may afterall contribute to generating a surface contribution of the dark current.Specifically, as the abovementioned article by Sood et al. 2011indicates, a dielectric passivation layer may induce the formation of adepleted zone in the intermediate region 23 from the second face 10 b.When this depleted zone is located in the space charge zone of thephotodiode, it may then be the site of an unwantedgeneration-recombination current. Furthermore, the dielectricpassivation layer may form an inversion zone, which is then electricallyconductive, and which may therefore connect the n+-doped second region22 to the lateral portion 31, here which is p+-doped.

Also, the passivation semiconductor layer 30, via an interdiffusionannealing (intermixing) carried out during the fabrication process,leads to the formation of a peripheral zone 24 based onsilicon-germanium in each semiconductor detection portion 20, at thesecond face 10 b and the lateral edge 20C. In this peripheral zone 24(delimited by a dotted line in the figures), the concentration ofsilicon is higher than that which the semiconductor material of thesemiconductor detection portion 20 may have. By way of example, thesemiconductor detection portion 20 is here made of germanium, thepassivation semiconductor layer 30 is made of silicon, and theperipheral zone 24 is made of silicon-germanium. However, owing to thehigher concentration of silicon in the peripheral zone 24 than in therest of the semiconductor detection portion 20, the gap therein ishigher. Also, this high gap is located in the zones where thecrystalline defects and the potential contaminants are located. Theprobability that a charge carrier can jump the gap spontaneously is thenreduced. The passivation semiconductor layer 30 therefore makes itpossible to reduce the unwanted surface currents and consequently toreduce the dark current. Furthermore, this gap opening also results inthe formation of a potential barrier with respect to photogeneratedminority carriers which would diffuse in the direction of thecrystalline defects and contaminants located close to the lateral edge20C and the second face 10 b. Thus, photogenerated carriers areprevented from recombining without being detected and do not contributeto the electrical signal of use for detection. The performance of thephotodiodes 2 is then improved.

Furthermore, as described below, the interdiffusion annealing does notresult in a substantial modification of the dimensions of the p+-dopedfirst region 21, in as far as the p-type dopant elements in thegermanium (boron, gallium, etc.) have a reduced diffusion coefficient.Conversely, the n-type dopant elements in the germanium (phosphorus,arsenic, antimony, etc.) have a high diffusion coefficient, theinterdiffusion annealing then advantageously being carried out beforethe step of producing the n+-doped second regions 22.

Furthermore, the semiconductor detection portion 20 advantageouslycomprises a p+-doped lateral region 25, located at the lateral edge 20C.This lateral region 25 has a higher doping level than that of theintermediate region 23 when it is doped. The p+-doped lateral region 25is flush with the lateral edge 20C and is in contact with the p+-dopedlateral part 31. As described below, it is obtained during theinterdiffusion annealing, or during a specific diffusion annealing ofthe dopant elements. Thus, the biasing of the p+-doped first region 21is improved in so far as the contact surface with the p+-doped lateralpart 31 is increased. Furthermore, this p+-doped lateral region 25 makesit possible to prevent the space charge zone of the photodiode 2 fromextending as far as the lateral edge 20C. Thus, the contribution of thiszone (potentially not free of defects linked to the production of thetrenches 13) to the dark current is limited. Thus the performance of thephotodiode 2 is improved.

In this example, the optoelectronic device 1 further comprises anelectrical circuit for biasing, for example for reverse-biasing, eachphotodiode 2. Also, the passivation semiconductor layer 30 comprisesp+-doped lateral parts 31 that are flush with the substantially planarupper face of the passivation semiconductor layer 30, and also ann+-doped central portion 32.1 of the upper part 32, that is flush withthe upper face and located in contact with the n+-doped second region22. The electrical circuit is here suitable for biasing the photodiodes2 from the second face 10 b. The electrical circuit here comprisescontact metallizations 41 extending through the through-openings of anupper insulating layer 40 which coats the passivation semiconductorlayer 30, and coming into contact with the p+-doped lateral parts 31 onthe one hand and with the n+-doped central portion 32.1 on the otherhand. The contact metallizations 41 have here a lower part 41.1 thatcomes into contact with the doped zones 31, 32.1 of the passivationsemiconductor layer 30, and an upper part 41.2 that is flush with theupper face and has dimensions in the XY plane larger than those of thelower part 41.1. The contact metallizations 41 here also act as areflector with respect to the incident light radiation coming from thefirst face ma (this face acting as the optical receiving face). Theabsorbed proportion of the incident light radiation in the semiconductordetection portion 20 is thus improved.

Note that the passivation semiconductor layer 30 was obtained bydepositing a silicon-based intrinsic semiconductor material. Also, thep+-doped lateral part 31 and the n+-doped central portion 32.1 areelectrically insulated from one another by a peripheral portion 32.2made from intrinsic silicon, and therefore having a high electricalresistivity, close to that of the dielectric materials, for examplegreater than 10⁹ Ω·cm. Also, any risk of short-circuiting between thep+-doped lateral part 31 and the n+-doped central portion 32.1, whenthey are biased, is thus eliminated.

One example of a process for fabricating an array of planar photodiodes2 according to the embodiment illustrated in FIG. 1 is now describedwith reference to FIGS. 2A to 2L. In this example, the photodiodes 2 aremade of germanium and comprise a PIN junction, and are suitable fordetecting infrared radiation in the SWIR range. The photodiodes 2 areplanar, and are passivated by a passivation semiconductor layer 30 whichextends both in contact with the second face 10 b and in contact withthe lateral edge 20C in the trenches 13. This passivation semiconductorlayer 30 advantageously makes it possible to ensure the biasing, forexample reverse-biasing, of each photodiode 2 from the second face 10 b.

During a first step (FIG. 2A), a first semiconductor layer 11 ofmonocrystalline germanium is produced. The first semiconductor layer 11is firmly attached to a support layer 50, here made of silicon, by meansof a lower insulating layer 51, here made of silicon oxide. This stacktakes the form of a GeOI (Germanium On Insulator) substrate. This stackis preferably produced by means of the process described in thepublication by Reboud et al. entitled ‘Structural and optical propertiesof 200 mm germanium-on-insulator (GeOI) substrates for silicon photonicsapplications’, Proc. SPIE 9367, Silicon Photonics X, 936714 (Feb. 27,2015). Such a process has the advantage of producing a germaniumsemiconductor layer 11 having an absence or a low content of structuraldefects such as dislocations. The germanium may be not intentionallydoped or be doped, for example p-doped. The semiconductor layer 11 mayhave a thickness of between 20 nm and 500 nm approximately, for exampleequal to 300 nm approximately, and may be covered with a protectivelayer (not represented) made of silicon oxide. The lower insulatinglayer 51 (BOX, for Buried Oxide) may have a thickness of between 50 nmand 1 μm and advantageously provides an antireflection function.

A p-doping of the germanium first layer 11 is then carried out, by ionimplantation of a dopant such as boron or gallium, when the germanium isintrinsic. The protective layer, where applicable, was removedbeforehand by surface cleaning and the germanium first layer 11 may becoated with a preimplantation oxide layer (not represented) having athickness of a few tens of nanometres, for example equal to 20 nm. Thegermanium layer 11 then has a doping level of between 10¹⁸ and 10²⁰at/cm³ approximately. Diffusion annealing of the dopant can then becarried out under nitrogen, for a few minutes to a few hours, forexample 1 h, at a temperature that may be between 600° C. and 800° C.,for example equal to 800° C. As a variant, the first layer 11 may bep+-doped with boron or gallium during the formation of the GeOI, inwhich case this doping step is not performed.

During a subsequent step (FIG. 2B), a second germanium semiconductorlayer 12 is produced epitaxially from the first layer 11. The two layers11, 12 are intended to form the coplanar germanium semiconductordetection portions 10 of the array of photodiodes 2. The second layer 12is formed epitaxially, for example by chemical vapour deposition (CVD)or by any other epitaxial technique. This layer may undergo variousannealings in order to reduce the level of dislocations. Thepreimplantation oxide layer, where applicable, was removed beforehand bysurface cleaning. The germanium second layer 12 is intrinsic here, i.e.not intentionally doped. It is intended to form the light absorptionzone of the photodiodes 2. Its thickness depends on the wavelength rangeof the light radiation to be detected in the case of a photodiode 2. Inthe context of SWIR photodiodes 2, the intrinsic germanium second layer12 has a thickness for example of between 0.5 μm and 3 μm, preferablyequal to 1.5 μm.

During a subsequent step (FIG. 2C), what is referred to as an upper part32 of the passivation semiconductor layer 30 is deposited so as tocontinuously cover the upper face 10 b of the second layer 12, i.e. soas to cover what will be the various semiconductor detection portions ofthe photodiodes 2. The risks of contamination or of oxidation of thesurface of the germanium are thus reduced. The passivation semiconductorlayer 30 is made from an intrinsic semiconductor material, and morespecifically from silicon, for example amorphous silicon,polycrystalline silicon or silicon-germanium. The upper face 10 b of thesecond layer 12 may have been cleaned. The upper part 32 of thepassivation semiconductor layer 30 may have a thickness of between 3 nmand 500 nm. As a variant, it is possible to produce the trenches 13before the deposition of the passivation semiconductor layer 30.

During a subsequent step (FIG. 2D), the trenches 13, intended topixellate the photodiodes 2 and to contribute here to electricallybiasing them, for example reverse-biasing them, are then produced byphotolithography and etching. Thus a localized etching of the upper part32 of the passivation semiconductor layer 30, of the intrinsic germaniumsecond layer 12, and of the p+-doped germanium first layer 11 is carriedout until ending up here on the lower insulating layer 51. Each trench13 thus extends preferably continuously around a photodiode 2. Thus aplurality of semiconductor detection portions 20 that are separated fromone another by a continuous trench 13 are obtained. Each semiconductordetection portion 20 is here formed of a p+-doped first region 21 and ofan intermediate region 23 which here is intrinsic. The trenches 13 arepreferably obtained by an anisotropic etching technique, so as to obtaina lateral edge 20 c that is substantially vertical along the Z axis. Thetrenches 13 have a transverse dimension (width) in the XY plane that maybe between 300 nm and 2 μm, for example equal to 1 μm. The semiconductordetection portions 20 may thus have a shape in the XY plane for examplea circular, oval, polygonal, for example square, shape, or any othershape.

During a subsequent step (FIG. 2E), the lateral part 31 of thepassivation semiconductor layer 30 is then produced. For this, asilicon-based intrinsic semiconductor material is deposited so as tocompletely fill the trenches 13. The semiconductor material ispreferably identical to that of the upper part 32 of the passivationsemiconductor layer 30, namely amorphous silicon, polycrystallinesilicon or silicon-germanium. Thus, a passivation semiconductor layer 30made from intrinsic silicon is obtained, of which the upper part 32extends in contact with the second face 10 b and the lateral part 31fills the trench 13 and extends in contact with the lateral edge 20C.The lateral 31 and upper 32 parts are two parts of the same continuoussemiconductor layer. A step of chemical mechanical polishing (CMP) maythen be carried out, in order to planarize the upper face of thepassivation semiconductor layer 30.

As a variant, the lateral 31 and upper 32 parts of the passivationsemiconductor layer 30 may be obtained simultaneously, by deposition ofa silicon-based intrinsic semiconductor material so as to extend incontact with the second face 10 b and to fill the trench 13.

During a subsequent step (FIG. 2F), an annealing is carried out thatensures the interdiffusion between the silicon of the passivationsemiconductor layer 30 and the germanium of the semiconductor detectionportion 20. A peripheral zone 24 made from silicon-germanium is thusobtained, which is located in the semiconductor detection portion 20 atthe interface with the passivation semiconductor layer 30. It istherefore flush with the second face 10 b and the lateral edge 20C in acontinuous manner. This peripheral zone 24 then has a higherconcentration of silicon than the concentration of silicon that thesemiconductor detection portion 20 may have outside of this zone. Theinterdiffusion annealing may be carried out at a temperature for exampleof the order of 700° C. to 850° C. for a time of the order of 30 minutesto 10 hours.

In so far as the gap of a semiconductor material based on germanium oron silicon-germanium increases with the concentration of silicon, theperipheral zone 24 has a higher gap than that of the semiconductordetection portion 20 outside of this zone 24. This peripheral zone 24with a “gap opening” thus makes it possible to effectively passivate thesemiconductor detection portion 20 and to reduce the surface componentof the dark current associated with the presence of unwantedcontaminants and/or crystalline defects. It also forms a potentialbarrier that makes it possible to reduce the risk of a photogeneratedminority carrier recombining in this peripheral zone 24 without beingdetected by the photodiode 2.

During a subsequent step (FIG. 2G), an ion implantation of p-type dopantelements, for example boron, into the lateral part 31 of the passivationsemiconductor layer 30 is carried out so as to obtain a lateral part 31that is p+-doped over the entire thickness thereof, with a doping levelfor example of between 10¹⁹ and 10²¹ at/cm³. The ion implantation iscarried out in a localized manner through a through-opening made in aphotoresist 52. The photoresist is then removed. Thus, the passivationsemiconductor layer 30 has a p+-doped lateral part 31 which is flushwith the upper face of the passivation semiconductor layer 30, and anintrinsic upper part 32.

During a subsequent step (FIG. 2H), an annealing that ensures thediffusion of the p-type dopant elements (boron) from the p+-dopedlateral part 31 to the semiconductor detection portion 20 via thelateral edge 20C is advantageously carried out. A p+-doped lateralregion 25 is thus obtained that extends into the semiconductor detectionportion 20 along the Z axis at the lateral edge 20C. The diffusionannealing of the p dopants may be carried out at a temperature forexample of between 700° C. and 850° C., for a time for example ofbetween 10 min and 5 h. As a variant, the interdiffusion annealing andthe diffusion annealing may be one and the same annealing carried outafter p-type doping of the lateral part 31 of the passivationsemiconductor layer 30.

During a subsequent step (FIGS. 2I and 2J), the n+-doped second region22 of the semiconductor detection portion 20 is then produced, here intwo stages. Firstly (FIG. 2I), an ion implantation zone for implantingn-type dopants, for example phosphorus, arsenic or antimony, by means ofa through-opening of a photoresist 53 (FIG. 2I) is defined. Thethrough-opening is located opposite a central zone of the photodiode 2,and has dimensions in the XY plane corresponding to the desireddimensions of the n+-doped second region 22. They may be, for example,between 300 nm and 90 μm. An ion implantation of a dopant such asphosphorus is carried out through the opening of the photoresist 53, inan initially intrinsic central portion 32.1 of the passivationsemiconductor layer 30, in order to make it n+-doped. The photoresist 53may then be removed. Next, (FIG. 2J), at least one annealing thatensures the diffusion of the n dopant elements from the n+-doped centralportion 32.1 of the passivation semiconductor layer 30 to thesemiconductor detection portion 20 is carried out, for example at afirst temperature of 800° C. for 5 min and then at a second temperatureof between 600° C. and 700° C. for 5 s to 60 s. The n+-doped secondregion 22 is thus obtained. By this two-stage step of producing then+-doped second region 22, the defects linked to an ion implantation ofn-type dopant elements directly into the semiconductor detection portion20 are thus limited.

The n+-doped second region 22 thus forms a doped well delimited in theXY plane and along the −Z direction by the intrinsic germaniumintermediate region 23. It is preferably excessively n+-doped and maythus have a doping level of the order of 10¹⁹ at/cm³. By way of example,it is possible to have a doping in the central portion 32.1 of the orderof 10²¹ at/cm³ at the interface with the layer 40, and of the order of10¹⁹ at/cm³ at the interface with the region 22, then the doping in theregion 22 decreases from 10¹⁹ at/cm³ to a value of the order of 10¹⁴at/cm³ in the intrinsic region 23. Owing to the fact that theinterdiffusion annealing of the silicon and germanium and also thediffusion annealing of the p-type dopant elements are carried out beforethe production of the n+-doped second region 22, this region hascontrolled dimensions. Specifically, the n-type dopant elements in thegermanium (phosphorus, arsenic, etc.) have a high diffusion coefficient,greater than that of the p-type dopant elements (boron, gallium, etc.).Also, the dimensions of the p+-doped lateral region 25 are notsubstantially changed or are barely changed, and the dimensions of then+-doped second region 22 correspond to the desired dimensions.

Thus, an n+-doped second region 22 is thus obtained within thesemiconductor detection portion 20, surrounded by the intrinsicgermanium intermediate region 23 in the XY plane. The passivationsemiconductor layer 30 comprises a p+-doped lateral part 31 which is incontact with the p+-doped first region 21 and with the p+-doped lateralregion 25; an upper part 32 formed of an n+-doped central portion 32.1in contact with the n+-doped second region 22; and an intrinsicperipheral portion 32.2 which surrounds the n+-doped central portion32.1 and physically and electrically separates this portion from thep+-doped lateral part 31. The n+-doped central portion 32.1 and thep+-doped lateral part 31 are flush with the upper face of thepassivation semiconductor layer 30.

During a subsequent step (FIG. 2K), an electrical interconnection layeris then produced. For this, an upper insulating layer 40 is deposited soas to continuously cover the passivation semiconductor layer 30. It maybe made from a dielectric material, for example a silicon oxide, nitrideor oxynitride, an aluminium oxide or nitride, a hafnium oxide, interalia. The upper insulating layer 40 may have a thickness for example ofbetween 10 nm and 500 nm. Annealing under N₂H₂ (e.g. 90% N₂ and 10% H₂)may be carried out at a temperature of the order of 400° C. to 450° C.to passivate the pendant bonds at the Si/Ge interface.

Finally, contact metallizations 41 are produced, that extend through theupper insulating layer 40, and come into contact with the n+-dopedcentral portion 32.1 on the one hand, and with the p+-doped lateral part31 on the other hand. The intrinsic peripheral portion 32.2 of thepassivation semiconductor layer 30 is not in contact with a contactmetallization. The contact metallizations 41 may be produced in aconventional manner, by filling openings that pass through the upperinsulating layer 40 with at least one metal material (barrier layerbased on Ti, copper core), followed by a step of CMP planarization. Eachcontact metallization 41 may have a lower part 41.1 in contact with thepassivation semiconductor layer 30, and an upper part 41.2 flush withthe upper face of the upper insulating layer 40. The upper part 41.2advantageously has transverse dimensions, in the XY plane, greater thanthose of the lower part 41.1, and thus provides an additional functionof reflecting the light radiation received through the first face 10 a,this forming the face for receiving the light radiation to be detected.

During a subsequent step (FIG. 2L), the optoelectronic stack thusobtained is hybridized on a control chip 60. The connection face of thecontrol chip 60 may thus be coated with an insulating layer 61, made ofa dielectric material, through which contact metallizations 62 pass. Theoptoelectronic stack and the control chip 60 are thus assembled byhybrid molecular adhesion, through contact between the faces formed bythe contact metallizations 41, 62 and the insulating layers 40, 61. Abonding annealing may be carried out so as to increase the surfacebonding energy between the two faces in contact.

The support layer 50 is then removed, for example by abrasion(grinding), so as to expose the lower insulating layer 51. This thusforms the face for receiving the light radiation to be detected, andadvantageously provides an antireflection function.

The fabrication process thus makes it possible to obtain an array ofplanar photodiodes 2 made from germanium, of which the lateral edge 20Cand the second face 10 b are passivated by a passivation semiconductorlayer 30 made from silicon. The peripheral zone 24 based onsilicon-germanium which is thus formed makes it possible to limit thesurface components of the dark current.

Furthermore, in so far as the n+-doped second region 22 is formed bydiffusion of dopants from an n+-doped central portion 32.1 of thepassivation semiconductor layer 30, this being after the interdiffusionannealing of the silicon and germanium, and after the optional diffusionannealing of the p-type dopants from the p+-doped lateral part 31, thefabrication process makes it possible to preserve the dimensions of then+-doped second region 22. Thus, any risk of short-circuiting of thephotodiodes 2 by excessive modification of the dimensions of the dopedsecond regions 22 is thus eliminated.

Furthermore, the performance of the photodiodes 2 is also notablyimproved by the following features: the p-doped lateral regions 25located at the lateral edge 20C, the wide upper parts 41.2 of thecontact metallizations 41, the doped second regions 22 obtained bydiffusion of dopants and not by ion implantation directly into thesemiconductor detection portion 20.

Particular embodiments have just been described. Various variants andmodifications will be apparent to a person skilled in the art. Thus, asmentioned previously, the lateral part 31 of the passivationsemiconductor layer 30 may not be p-doped. The p-doped first region 21may then be biased using an electrical contact located at the first face10 a.

1-10. (canceled)
 11. A process for fabricating an optoelectronic devicecomprising an array of planar photodiodes made from germanium,comprising the following steps: i) producing a stack of semiconductorlayers, made from germanium, having a first face and a second face thatare opposite one another and are parallel to a main plane of thephotodiodes, and comprising: a p-doped first layer, defining the firstface, a second layer, covering the first layer, and defining the secondface, ii) producing trenches, extending through said stack from thesecond face in the direction of the first face, defining for eachphotodiode a semiconductor portion of said stack; iii) depositing apassivation intrinsic semiconductor layer, made from silicon, coveringthe second face and filling the trenches; iv) annealing, ensuring, foreach photodiode, an interdiffusion of the silicon of the passivationsemiconductor layer and of the germanium of the semiconductor portion,thus forming a peripheral zone of the semiconductor portion, made fromsilicon-germanium, and located in contact with the passivationsemiconductor layer.
 12. The process according to claim 11, comprising,following the interdiffusion annealing step, a step of producing, foreach photodiode, an n-doped upper region of the semiconductor portion,flush with the second face and located at a distance from a lateral edgeof the semiconductor portion connecting the first and second faces toone another, via the following substeps: localized ion implantation ofn-type dopant elements in a central portion of the passivationsemiconductor layer, annealing, ensuring a diffusion of the n-typedopant elements from the central portion to the semiconductor portion,thus forming the n-doped upper region.
 13. The process according toclaim 11, comprising a step of doping what are referred to as lateralparts of the passivation semiconductor layer, that are located in thetrenches, by localized ion implantation of p-type dopant elements, thusforming, for each photodiode, a p-doped lateral part, followed by a stepof annealing ensuring the diffusion of the p-type dopant elements fromthe lateral parts to the semiconductor portions, thus forming, in eachsemiconductor portion, a p-doped lateral region flush with a lateraledge of the semiconductor portion.
 14. The process according to claim12, wherein the step of diffusion annealing of the p-type dopantelements is carried out before or during the step of diffusion annealingof the n-type dopant elements.
 15. The process according to claim 11,comprising a step of producing an electrical interconnection layer,comprising: depositing an upper insulating layer made of a dielectricmaterial, covering the passivation semiconductor layer, then forming,through the upper insulating layer, conductive portions, that come intocontact, for each photodiode, with a p-doped lateral part of thepassivation semiconductor layer located in a trench on the one hand, andwith an n-doped central portion of the passivation semiconductor layerlocated on the second face and in contact with what is referred to as ann-doped upper region of the semiconductor portion.
 16. An optoelectronicdevice comprising an array of planar photodiodes made from germanium,having a first face and a second face that are opposite one another andare parallel to a main plane of the photodiodes, each photodiodecomprising: a semiconductor portion, comprising: a p-doped lower firstregion flush with the first face, an n-doped upper second region flushwith the second face, an intermediate region located between the firstand second regions and surrounding the second region in the main plane,a trench, extending from the second face in the direction of the firstface, and defining a lateral edge of the semiconductor portionconnecting the first and second faces; a passivation semiconductorlayer, made from silicon, covering the second face and filling thetrench; a peripheral zone made from silicon-germanium, located in thesemiconductor portion in contact with the passivation semiconductorlayer at the second face and at the lateral edge.
 17. The optoelectronicdevice according to claim 16, wherein the passivation semiconductorlayer comprises an upper part extending in contact with the second face,and a lateral part filling the trenches and extending in contact withthe lateral edge, the upper part comprising an n-doped central portionlocated in contact with the n-doped second region, and a peripheralportion, surrounding the central portion in the main plane.
 18. Theoptoelectronic device according to claim 17, wherein the lateral part isp-doped, and is in contact with the p-doped first region.
 19. Theoptoelectronic device according to claim 18, wherein each semiconductorportion comprises a p-doped lateral region located in contact with thep-doped lateral part.
 20. The optoelectronic device according to claim16, comprising a control chip suitable for biasing the photodiodes,assembled and electrically connected to the array of photodiodes at thesecond face.